Nickel monosilicide

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Nickel monosilicide - Wikipedia

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NiSi
Identifiers

CAS Number	12035-57-3^Y
3D model (JSmol)	Interactive image
ChemSpider	8351596
PubChem CID	10176091
CompTox Dashboard (EPA)	DTXSID80923344
InChI InChI=1S/Ni.Si Key: PEUPIGGLJVUNEU-UHFFFAOYSA-N
SMILES [Si].[Ni]
Properties
Chemical formula	NiSi
Molar mass	86.778 g/mol
Melting point	1,000 °C; 1,832 °F; 1,273 K^[2]
Magnetic susceptibility (χ)	−0.3×10⁻⁶ emu/g^[1]
Structure^[3]
Crystal structure	Orthorhombic, oP8
Space group	Pnma, No. 62
Lattice constant	a = 0.519 nm, b = 0.333 nm, c = 0.5628 nm
Formula units (Z)	4
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa). Infobox references

Nickel monosilicide is an intermetallic compound formed out of nickel and silicon. Like other nickel silicides, NiSi is of importance in the area of microelectronics.

Preparation

Nickel monosilicide can be prepared by depositing a nickel layer on silicon and subsequent annealing. In the case of Ni films with thicknesses above 4 nm, the normal phase transition is given by Ni₂Si at 250 °C followed by NiSi at 350 °C and NiSi₂ at approximately 800 °C.^[4] For films with an initial Ni thickness below 4 nm a direct transition from orthorhombic Ni₂Si to epitaxial NiSi_2−x, skipping the nickel monosilicide phase, is observed.^[5]

Uses

Several properties make NiSi an important local contact material in the area of microelectronics, among them a reduced thermal budget, low resistivity of 13–14 μΩ·cm and a reduced Si consumption when compared to alternative compounds.^[6]

References

^ Shinoda, Daizaburo; Asanabe, Sizuo (1966). "Magnetic Properties of Silicides of Iron Group Transition Elements". Journal of the Physical Society of Japan. 21 (3): 555. Bibcode:1966JPSJ...21..555S. doi:10.1143/JPSJ.21.555.
^ Gas, P.; d’Heurle, F. M. (1998). "Diffusion in silicides". In Beke, D. L. (ed.). Landolt-Börnstein - Group III Condensed Matter. Vol. 33A. Springer. pp. 1–38. doi:10.1007/10426818_13. ISBN 3-540-60964-4.
^ Wopersnow W., Schubert K. (1976) Z. Metallkd., 67, 807–810
^ d'Heurle, F. M.; Gas, P. (February 1986). "Kinetics of formation of silicides: A review". Journal of Materials Research. 1 (1): 205–221. Bibcode:1986JMatR...1..205D. doi:10.1557/JMR.1986.0205. S2CID 135724287.
^ Wolf, Philipp M.; Pitthan, Eduardo; Zhang, Zhen; Lavoie, Christian; Tran, Tuan T.; Primetzhofer, Daniel (2022-02-21). "Direct Transition from Ultrathin Orthorhombic Dinickel Silicides to Epitaxial Nickel Disilicide Revealed by In Situ Synthesis and Analysis". Small. 18 (14): 2106093. doi:10.1002/smll.202106093. ISSN 1613-6810. PMID 35191181. S2CID 247023770.
^ Lavoie, C.; d’Heurle, F.M.; Detavernier, C.; Cabral, C. (November 2003). "Towards implementation of a nickel silicide process for CMOS technologies". Microelectronic Engineering. 70 (2–4): 144–157. doi:10.1016/S0167-9317(03)00380-0.

v t e Nickel compounds
Nickel(0)	Ni(CO)₄ Ni(COD)₂
Nickel(II)	NiF₂ K₂NiF₄ NiF²⁻ ₄ NiCl₂ NiCl²⁻ ₄ NiBr₂ NiBr²⁻ ₄ NiI₂ NiI²⁻ ₄ Ni(CN)₂ K₂Ni(CN)₄ Ni(SCN)₂ NiO Ni(OH)₂ NiCO₃ NiSO₄ Ni₃(PO₄)₂ NiCrO₄ NiTiO₃ NiSeO₄ NiS NiSe Ni(ClO₄)₂ Ni(NO₃)₂ Ni(NO₂)₂ Ni(NO₂)³⁻ ₅ / Ni(NO₂)⁴⁻ ₆ Ni(CO₂H)₂ C ₂₄H ₄₆NiO ₄ C ₃₆H ₇₀NiO ₄ Ni(acac)₂
Nickel(III)	NiF₃ Ni₂O₃ NiOOH
Nickel(IV)	NiF₄ K₂NiF₆ MNiO_$x$

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v t e Silicon compounds
Si(II)	SiO SiS
Si(III)	Si₂H₆ Si₂Cl₆
Si(IV)	SiBr₄ SiC SiCl₄ SiF₄ SiH₄ SiI₄ SiAu₄ SiO₂ SiS₂ Si₃N₄ Si(N₃)₄ Si₂N₂O Si₂Cl₆O SiF₃Cl